Ohmic contact to aluminum-containing compound semiconductors

Details Ohmic contact to aluminum-containing compound semiconductors Ohmic contact to aluminum-containing compound semiconductors

1977-03-24

1978-03-28

Lake, Roy

29590, 357 17, 357 71, H01L 2348, B01J 1700

Patent

active

040818241

ABSTRACT:
A consistently low resistance ohmic contact is made to an aluminum-containing compound semiconductor by a multilayer deposition and heat treatment process. The process includes the deposition of a transition layer on the semiconductor surface to be contacted and an overlying gold layer to provide external contact. The transition layer consists of aluminum and a shallow dopant element which may be deposited as successive layers or together. After the transition layer and the gold overlay are deposited, the composite is raised to a temperature at which the transition layer is liquid. In cases in which the gold-dopant binary system has a polyphase region, it is preferable to select the thickness of the gold layer such that the gold-dopant alloy is in the solid solution region of the phase diagram of that binary system, to prevent enhanced diffusion to the upper gold surface along grain boundaries. In an exemplary realization, an Al-Sn layer was used to contact n-type GaAlAs.

REFERENCES:
patent: 3406050 (1968-10-01), Shortes
patent: 3620837 (1971-11-01), Leff
patent: 3767482 (1973-10-01), Kock
patent: 3863334 (1975-02-01), Coleman
patent: 3942243 (1976-03-01), Murray
patent: 3942244 (1976-03-01), Flohrs
Rideout, Ohmic Control Technique for N-Type GaAs, GaAsP and GaAlAs, IBM Technical Disclosure Bulletin, vol. 16, No. 9, p. 3070, Feb. 1974.

Affiliated with

Also associated with

Rating

Ohmic contact to aluminum-containing compound semiconductors does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Ohmic contact to aluminum-containing compound semiconductors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Ohmic contact to aluminum-containing compound semiconductors will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-646156