Non-single-crystal semiconductor light emitting device

Details Non-single-crystal semiconductor light emitting device Non-single-crystal semiconductor light emitting device

1984-08-30

1986-10-07

Davie, James W.

357 2, 357 4, 357 59, H01L 3300

Patent

active

046162445

ABSTRACT:
A non-single-crystal semiconductor light emitting device is provided with a first electrode or a first laminate member of the first electrode and P (or N) type first non-single-crystal semiconductor layer formed on the first electrode, a non-single-crystal semiconductor laminate member made up a plurality m (where m.gtoreq.3) of non-single-crystal semiconductor layers M.sub.1, M.sub.2, . . . and M.sub.m formed on the first electrode or the first laminate member and a second electrode or a second laminate member of a N(or P) type second non-single-crystal semiconductor layer formed on the non-single-crystal semiconductor laminate member and a second electrode formed on the second non-single-crystal semiconductor layer. The energy gaps E.sub.g1, E.sub.g2, . . . and E.sub.gm of the non-single-crystal semiconductor layers M.sub.1, M.sub.2, . . . and M.sub.m bear such relationships as E.sub.g1 >E.sub.g2 <E.sub.g3, E.sub.g3 >E.sub.g4 <E.sub.g5, . . . E.sub.(m-2) >E.sub.g(m-1) <E.sub.gm.

REFERENCES:
patent: 4527179 (1985-07-01), Yamazaki

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