Method of making ohmic contact to ferroelectric semiconductors

Details Method of making ohmic contact to ferroelectric semiconductors Method of making ohmic contact to ferroelectric semiconductors

1988-12-14

1990-01-23

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437245, 437247, 437 19, 437187, 437 39, 252520, 148DIG93, 148DIG94, H01L 2144

Patent

active

048958123

ABSTRACT:
A layer of chemically compatible conductive material is applied to ferroelectric semiconductor material having a permanent polarization below its Curie temperature. The materials are heated to a temperature above the Curie temperature of the ferroelectric semiconductor material and allowed to cool. The result is a low resistance contact. The ferroelectric semiconductive material may be a layer on a non ferroelectric semiconductor material with a matching work function or matching dopant levels.

REFERENCES:
patent: 3962146 (1976-06-01), Matsuoka et al.
patent: 4261764 (1981-04-01), Narayan
patent: 4772985 (1988-09-01), Yasumoto et al.

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