Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

1988-10-04

1990-01-23

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 36, 437 38, 437911, 148DIG88, 148DIG100, 148DIG105, 357 15, 357 22, H01L 21265

Patent

active

048958115

ABSTRACT:
In a method of manufacturing a GaAsFET, an insulating film used as a mask for implanting ions to form a gate region is used as a mask for sputtering a material of a gate electrode. Consequently, the gate electrode is formed to be aligned with the gate region. A GaAsFET in which the gate electrode can be stably positioned with respect to the small gate region with a high degree of accuracy and which is suitable for high frequency applications can be manufactured.

REFERENCES:
patent: 4561169 (1985-12-01), Miyazaki et al.
patent: 4729967 (1988-03-01), Armiento
Patent Abstracts of Japan, vol. 7, No. 21 (E-155) (1166) Jan. 27, 1983 & JP-A-57 178 374 (Sumitomo Denki Kogyo K.K.) 2-11-82.
Patent Abstracts of Japan, vol. 7, No. 21 (E-155) (1166) Jan. 27, 1983 & JP-A-57 178 376 (Sumitomo Denki Kogyo K.K.) 2-11.varies.87.
GaAs IC Symposium, Technical Digest 1985, Nov. 12-14, 1985, Monterrey, Calif.; pp. 195-198; IEEE, New York, US, M. Wada et al., "GaAs JFET Technology for DCFL LSI".
Electronic Letters, vol. 17, No. 17, Aug., 1981; pp. 621-623; London, Great Britain, J. Kasamara et al., "Fully Ion-Implanted GaAs ICs Using Normally-Off JFETs".

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