Split-gate field effect transistor

Details Split-gate field effect transistor Split-gate field effect transistor

1989-01-09

1991-04-30

Prenty, Mark

357 2312, 357 91, H01L 2978, H01L 2986

Patent

active

050123157

ABSTRACT:
A field effect transistor having a gate voltage swing in the transistor channel varying as a function of position between the drain and the source. The gate voltage swing in the transistor channel may be made to vary as a function of position by making the threshold voltage a function of position. Alternatively, a split-gate device may be used by applying a voltage between the gates. In both cases, the electric field near the source is raised to accelerate the electrons thereby decreasing electron transit time.

REFERENCES:
patent: 3333168 (1967-07-01), Hofstein
patent: 3436623 (1969-04-01), Beer
patent: 3714522 (1973-01-01), Komiya
patent: 4395725 (1983-07-01), Parekh
patent: 4814839 (1989-03-01), Nishizawa
Ballistic Transport in Hot-Electron Transistors, written by Jingming Xu and Michael Shur and published in the Journal of Applied Physics 62 (9), Nov. 1, 1987, pp. 3816 through 3820.

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