Semiconductor integrated circuit and a process for producing the

Details Semiconductor integrated circuit and a process for producing the Semiconductor integrated circuit and a process for producing the

1988-10-25

1991-04-30

James, Andrew J.

357 238, 357 41, 357 50, H01L 2906, H01L 2968, H01L 2704

Patent

active

050123122

ABSTRACT:
The impurity concentration in a channel stopper in contact with a second fine active area is selected to be lower than the impurity concentration in a first active area that is wider than the second active area. This prevents the impurity concentration in the second active area from excessively rising that is caused by the diffusion of impurities when the insulating film for isolation is being formed, and helps improve characteristics and reliability of fine semiconductor device formed in the second active area.

REFERENCES:
patent: 4385947 (1983-05-01), Halfacre et al.
patent: 4527325 (1985-07-01), Geipel, Jr. et al.
patent: 4562638 (1986-01-01), Schwabe et al.
patent: 4748489 (1988-05-01), Komatsu
patent: 4873559 (1989-10-01), Shimizu et al.

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