Semiconductor thin film device with thick insulator at gate edge

Details Semiconductor thin film device with thick insulator at gate edge Semiconductor thin film device with thick insulator at gate edge

1989-10-10

1991-04-30

Jackson, Jr., Jerome

357 4, 357 56, H01L 2978, H01L 2712

Patent

active

050123114

ABSTRACT:
A semiconductor device comprises an insulating substrate; an island shaped single-crystalline semiconductor layer on the insulating substrate; and a conductor pattern provided on the single-crystalline semiconductor layer through the insulating layer and extending onto the insulating substrate. The edge region of the single-crystalline semiconductor layer, which region is below the conductor pattern, in the insulating layer is selectively formed with a larger thickness than other portions of the insulating layer.

REFERENCES:
patent: 4242156 (1980-12-01), Peel
patent: 4251828 (1981-02-01), Sakurai
patent: 4277884 (1981-07-01), Hsu

Affiliated with

Also associated with

Rating

Semiconductor thin film device with thick insulator at gate edge does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor thin film device with thick insulator at gate edge, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor thin film device with thick insulator at gate edge will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-644784