Semiconductor laser

Details Semiconductor laser Semiconductor laser

1996-12-17

1998-04-14

Bovernick, Rodney B.

Coherent light generators

Particular active media

Semiconductor

257101, 257102, H01S 319, H01L 3300

Patent

active

057401926

ABSTRACT:
A semiconductor laser exhibiting an oscillation wavelength of 450 nm or less and comprising a substrate, a lower clad layer formed on or above the substrate and mainly composed of a III-V Group compound semiconductor, an active layer formed directly on the lower clad layer and mainly composed of a III-V Group compound semiconductor, and an upper p-type clad layer formed directly on the active layer and mainly composed of a III-V Group compound semiconductor. This semiconductor laser is characterized in that the upper p-type clad layer contains Mg, Si and at least one impurities for compensating residual donors.

REFERENCES:
patent: 5617438 (1997-04-01), Hatano et al.

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