Polycrystalline silicon pressure transducer

Details Polycrystalline silicon pressure transducer Polycrystalline silicon pressure transducer

1975-09-26

1977-01-18

Tupman, W.

Metal working

Method of mechanical manufacture

Assembling or joining

29591, 29610SG, B01J 1700

Patent

active

040031276

ABSTRACT:
A semiconductor pressure transducer having a polycrystalline silicon diaphragm providing an extremely pressure sensitive and temperature stable device, and a method of making the same. The polycrystalline silicon can easily be vapor deposited on an etch resistant layer covering a surface of a wafer or base, preferably monocrystalline silicon. Such vapor deposition of the polycrystalline silicon more accurately and consistently defines the thickness of the diaphragm than can be obtained by grinding or etching. A pressure responsive resistor formed in the diaphragm is automatically electrically isolated by the comparatively high resistivity of the polycrystalline silicon. Accordingly, PN junction isolation and passivating oxides on the diaphragm are not required thereby resulting in increased temperature stability.

REFERENCES:
patent: 3734770 (1973-05-01), Price
patent: 3858150 (1974-12-01), Gurtler

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