Method of forming isolated island regions in a semiconductor sub

Details Method of forming isolated island regions in a semiconductor sub Method of forming isolated island regions in a semiconductor sub

1984-09-19

1986-10-07

Roy, Upendra

Metal treatment

Compositions

Heat treating

29576B, 29576W, 29578, 148175, 148187, 357 51, H01L 21225, H01L 21302

Patent

active

046157468

ABSTRACT:
A method of fabricating a semiconductor device comprises the steps of forming oxidation-resistive films on the surface and sides of a protrusion formed on a semiconductor substrate, forming grooves at the bottom of the sides of the protrusion, forming highly doped impurity diffusion regions in the groove surfaces, and subjecting the grooves to selective oxidation to form an oxide film under the bottom of the protrusion while a highly doped impurity diffusion region is formed, and forming a device in the protrusion.

REFERENCES:
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patent: 4329772 (1982-05-01), Oikawa et al.
patent: 4403396 (1983-09-01), Stein
patent: 4449285 (1984-05-01), Janes et al.
patent: 4497108 (1985-02-01), Kurusowa
patent: 4505025 (1985-03-01), Kurusowa et al.
patent: 4506434 (1985-03-01), Ogawa et al.
Ning et al, IBM-TDB, 26 (Apr. 1984), 5858.

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