Method of making ohmic resistance WSb, contacts to III-V semicon

Details Method of making ohmic resistance WSb, contacts to III-V semicon Method of making ohmic resistance WSb, contacts to III-V semicon

1990-02-12

1991-04-30

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437192, 357 65, 357 67, 148DIG20, H01L 21283

Patent

active

050117920

ABSTRACT:
An ohmic contact to III-V semiconductor material comprises substantially eighty to ninety-five percent by weight of tungsten, five to ten percent by weight of antimony, and zero to fifteen percent by weight of indium. The materials are simultaneously sputtered from separate targets in a sputtering reactor.

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