Production of an integrated memory cell

Details Production of an integrated memory cell Production of an integrated memory cell

1989-07-07

1991-04-30

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 40, 437 43, 437 48, 437 49, 437 61, 437 63, 437 64, 437190, 437191, 357 235, 357 231, 357 239, H01L 2170

Patent

active

050117874

ABSTRACT:
The invention concerns the method to produce an EPROM or EEPROM type integrated memory cell on a semiconductor substrate. The cell comprises memory points, electrically insulated from each other, each memory point comprising a source (4), a drain (6), a floating gate (350), a control grid (38), a channel (5) situated under the floating gate (350), the source (4) and the drain (6) being situated on both sides of the floating (350), the floating gates of each memory point being laterally distant and insulated along a first direction (X) from one or two other floating gates, the production of the cell comprising a stage for embodying lateral insulations (320) of the floating gates along the first direction (X), then a stage for embodying the actual floating gates (350), which makes it possible to obtain insulations between submicronic floating gates.
Application for the embodiment of integrated memory cells.

REFERENCES:
patent: 4359816 (1982-11-01), Abbas et al.
patent: 4373250 (1983-02-01), Malwah
patent: 4402128 (1983-09-01), Blackstowe
patent: 4409723 (1983-10-01), Harari
patent: 4597060 (1986-06-01), Mitchell et al.
patent: 4698900 (1987-10-01), Esquivel
patent: 4742018 (1988-05-01), Kimura et al.
patent: 4749443 (1988-06-01), Mitchell et al.
patent: 4766088 (1988-08-01), Kono et al.
patent: 4849369 (1989-07-01), Jeuch et al.
patent: 4851365 (1989-07-01), Jeuch
patent: 4855248 (1989-08-01), Ariizumi et al.
patent: 4886763 (1989-12-01), Suzuki

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