Semiconductor device having gold wiring layer provided with a ba

Details Semiconductor device having gold wiring layer provided with a ba Semiconductor device having gold wiring layer provided with a ba

1993-05-10

1995-05-16

Larkins, William D.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257750, 257763, 257764, 257767, 257768, 257769, H01L 2348, H01L 2944, H01L 2954, H01L 2960

Patent

active

054163595

ABSTRACT:
A semiconductor device having a gold wiring layer for an element region is disclosed, in which the gold wiring layer is connected to the element region through a barrier metal layer, the barrier metal layer comprising first and second layers each containing titanium and a third layer sandwiched between the first and second layers and made of a selected one from platinum and palladium. The third layer effectively prevents gold in the gold wiring layer from diffusing into the element region and the second layer enhances the adhesion between the gold wiring layer and an insulating film.

REFERENCES:
patent: 3507756 (1970-04-01), Wenger
patent: 4164461 (1979-08-01), Schilling

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