Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Patent
1995-10-06
1998-04-14
Whitehead, Carl W.
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
257306, H01L 2900
Patent
active
057395764
ABSTRACT:
A multilayer decoupling capacitor structure is disclosed, having a first decoupling capacitor with one electrode formed in a conductively doped silicon substrate and a second electrode made of conductively doped polysilicon. A third bifurcated conductive layer disposed above the second electrode in conjunction with a fourth conductive layer above the third layer form a second and third decoupling capacitor. The first decoupling capacitor serves to decouple circuitry associated with dynamic random access memory cells, while the second and third decoupling capacitors provide decoupling for further circuitry.
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Casper Stephen L.
Duesman Kevin G.
Lowrey Tyler A.
Shirley Brian M.
Clark S. V.
Micro)n Technology, Inc.
Whitehead Carl W.
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