Method for producing an insulating trench in an SOI substrate

Details Method for producing an insulating trench in an SOI substrate Method for producing an insulating trench in an SOI substrate

1994-08-15

1995-05-16

Fourson, George

Fishing, trapping, and vermin destroying

H01L 2176

Patent

active

054160413

ABSTRACT:
A method is provided for producing an insulation trench in an SOI substrate having a monocrystalline silicon layer and an insulating layer, a trench that extends onto the insulating layer and whose cross-section at the surface of the insulating layer is widened by under-etchings of the monocrystalline layer by etching into the monocrystalline silicon layer. A silicon structure is formed that at least covers the sidewalls of the trench and fills the under-etchings. The silicon structure is recrystallized and at least partially oxidized in a temperature step. The trench is filled with an insulation structure.

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