Method of making an integrated field effect transistor and reson

Details Method of making an integrated field effect transistor and reson Method of making an integrated field effect transistor and reson

1993-11-15

1995-05-16

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 51, 437904, 437915, 437133, H01L 2170

Patent

active

054160405

ABSTRACT:
This is an integrated device which comprises an integrated transistor and resonant tunneling diode where the transistor comprises a substance 10, a buffer layer layer 12 over the substrate 10, and a channel layer 14 over the buffer 12; and the resonant tunneling diode (RTD) comprises a first contact layer 18, a first tunnel barrier layer 20 over the first contact layer 18, a quantum well 22 over the first tunnel barrier layer 20, a second tunnel barrier layer 24 over the quantum well 22, and a second contact layer 26 over the second tunnel barrier layer 24. Other devices and methods are also disclosed.

REFERENCES:
patent: 4242595 (1980-12-01), Lehovec
patent: 4641173 (1987-02-01), Malhi et al.
patent: 5229623 (1993-07-01), Tanoue et al.
patent: 5289015 (1994-02-01), Chirovsky et al.

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