Method of forming isolation regions containing conductive patter

Details Method of forming isolation regions containing conductive patter Method of forming isolation regions containing conductive patter

1985-05-28

1986-10-07

Saba, William G.

Metal working

Method of mechanical manufacture

Assembling or joining

29578, 29580, 148174, 148DIG20, 148DIG50, 148DIG85, 156643, 156648, 156653, 156657, 1566591, 1566611, 357 50, 357 65, H01L 2176, H01L 2188

Patent

active

046151044

ABSTRACT:
A method of manufacturing a semiconductor device which comprises a step of forming a first groove in a semiconductor layer, a step of filling the first groove with a first insulating film, a step of selectively etching the first insulating film in the first groove to form at least one second groove having a small width, and a step of filling the second groove with a second insulating film to form an isolation layer having a large width and substantially flush with the semiconductor layer.

REFERENCES:
patent: 4104090 (1978-08-01), Pogge
patent: 4238278 (1980-12-01), Antipov
patent: 4394196 (1983-07-01), Iwai
patent: 4404735 (1983-09-01), Sakurai
patent: 4419813 (1983-12-01), Iwai

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