Laser activated MTOS microwave device

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357 30, 357 58, 357 59, H01L 2978

Patent

active

045311439

ABSTRACT:
A metal thin oxide silicon (MTOS) optically-activated semiconductor device having respective thin, optically absorptive aluminum layers deposited over a thin oxide layer formed on a silicon substrate over a lightly doped, implant diffused region.

REFERENCES:
patent: 3523190 (1970-08-01), Geotzberger et al.
patent: 3852119 (1974-12-01), Gosney et al.
patent: 3882531 (1975-05-01), Michon et al.
patent: 3917943 (1975-11-01), Auston
patent: 4231050 (1980-10-01), Casey, Jr. et al.
patent: 4376285 (1983-03-01), Leonberger et al.
patent: 4383267 (1983-05-01), Webb
Jacobus et al., "Optical Detector for Short-Wavelength Light", IBM Technical Disclosure Bulletin, vol. 14, No. 9, Feb. 1972, p. 2624.
LeBlanc, "One-Device Storage Cell Method", IBM Technical Disclosure Bulletin, vol. 16, No. 3, Aug. 1973, pp. 956-957.
Thaniyavarn et al., "Metal/Tunnel-Barrier/Semiconductor/Tunnel-Barrier/Metal Fast Photodetector", Appl. Phys. Lett. 40(3), Feb. 1982, pp. 255-257.

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