Method of manufacturing a semiconductor device and device manufa

Metal working – Method of mechanical manufacture – Assembling or joining

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29578, 357 59, B01J 1700

Patent

active

040807193

ABSTRACT:
A method of manufacturing a metal silicide pattern with respect to which two electrode zones are to be provided in a self-registering manner. According to the invention the pattern is provided in the form of a layer of polycrystalline silicon and, by selective oxidation and masking, only the upper surface of the pattern is exposed to the silicide formation so that passivation problems and short circuit are avoided. The use of silicides which cannot withstand high temperatures is also possible.

REFERENCES:
patent: 3699646 (1972-10-01), Vadasz
patent: 3745647 (1973-07-01), Boleky
patent: 3761327 (1973-09-01), Harlow
patent: 3777364 (1973-12-01), Schinella
patent: 3958323 (1976-05-01), De La Moneda

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