Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Responsive to non-optical – non-electrical signal
Patent
1995-08-10
1997-07-29
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Responsive to non-optical, non-electrical signal
257253, 257414, 422 95, 422 97, 422 98, 338 34, 73 2324, H01L 2358
Patent
active
056524439
ABSTRACT:
A sensor including a micro-bridge heater which is located above a depression in the surface of a substrate. The heater includes a first insulating film on the substrate, a conductive film on the first insulating film, and a second insulating film on the conductive film. The first and second insulating films are made of the same material, preferably tantalum oxide (Ta.sub.2 O.sub.5) and are the same thickness. A foundation film is not employed as an adhesive between the first insulating film and the conductive film due to the strong adherence between the first insulating film and the conductive film which is preferably made of platinum or a platinum alloy. Because the first and second insulating films are made of the same material and have the same thicknesses, the insulating films have similar rates of thermal expansion and the expansion or contraction of the insulating films offset each other, thus reducing the thermal stress imposed on the conductive film.
REFERENCES:
patent: 4343768 (1982-08-01), Kimura
patent: 4791465 (1988-12-01), Sakai et al.
patent: 4967589 (1990-11-01), Yagawara et al.
patent: 5003812 (1991-04-01), Yagawara et al.
Mintel William
Ricoh Company, Inc.
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