Method for manufacturing a superconducting device having a reduc

Superconductor technology: apparatus – material – process – Processes of producing or treating high temperature... – Semiconductor device or thin film electric solid-state...

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505329, 505410, 505473, 505702, 505728, 427 62, 427 63, H01L 3924

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057390843

ABSTRACT:
A method for fabricating a superconducting device with a substrate, a first oxide superconductor thin film, a barrier layer, a diffusion layer, and a second oxide superconductor thin film. The first oxide superconductor thin film with a very thin thickness is formed on the principal surface of the substrate. The barrier layer and the diffusion source layer are formed on a portion of the first oxide superconductor thin film. The second oxide superconductor thin film is grown on an exposed surface of the first oxide superconductor thin film until the barrier and diffusion source layers are embedded in the second oxide superconductor thin film, so that a material of the diffusion source layer is diffused into the second oxide superconductor thin film.

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Ma et al, Appl. Phys. Lett. 55(9) Aug. 1989, pp. 896-898.

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