Flash memory having transistor redundancy

Details Flash memory having transistor redundancy Flash memory having transistor redundancy

1995-02-23

1996-04-30

Nelms, David C.

Static information storage and retrieval

Floating gate

Particular connection

365200, 365210, G11C 1134

Patent

active

055131379

ABSTRACT:
A flash programmable memory device comprises first and second row lines each having memory elements therealong with the second conductive line functionally replacing the first conductive line. The memory device further includes a first program circuit for programming the memory elements along the first row line, and a second program circuit for programming memory elements along the second row line. A read circuit bypasses the first conductive line during all read cycles and reads the memory elements along the second row line.

REFERENCES:
patent: 5233559 (1993-08-01), Brennan, Jr.
patent: 5388076 (1995-02-01), Ihara

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