Fishing – trapping – and vermin destroying
Patent
1996-05-28
1998-04-14
Bowers, Jr., Charles L.
Fishing, trapping, and vermin destroying
437192, 437200, H01L 2144
Patent
active
057390460
ABSTRACT:
A new method of forming a metal diffusion barrier layer is described. Semiconductor device structures are formed in and on a semiconductor substrate. At least one dielectric layer covers the semiconductor structures and at least one contact hole has been opened through the dielectric layer(s) to the semiconductor substrate. A metal diffusion barrier layer is now formed using the following steps: In the first step, a thin layer of titanium is deposited conformally over the surface of the dielectric layer(s) and within the contact opening(s) and annealed in a nitrogen atmosphere at a temperature of between about 580.degree. to 630.degree. C. for between about 20 to 120 seconds. The second step is to form stable and adhesive titanium compounds on the pre-metal dielectric layer as well as to form a low resistance silicide on the contact silicon by annealing at between about 800.degree. to 900.degree. C. for between about 5 to 60 seconds. The final step is to release the system stress by tempering the layer at a temperature of between about 600.degree. to 750.degree. C. This completes the barrier layer which has good adhesion to the dielectric layer(s) and, therefore, promotes improved pad bonding yield.
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Chang Shih-Chanh
Lur Water
Wu Der Yuan
Wu Jiun Yuan
Bowers Jr. Charles L.
Gurley Lynne A.
United Microelectronics Corporation
Wright William H.
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