Fishing – trapping – and vermin destroying
Patent
1996-02-12
1998-04-14
Bowers, Jr., Charles L.
Fishing, trapping, and vermin destroying
437174, 437233, 437967, 437937, 117 8, 117904, 148DIG93, H01L 21268
Patent
active
057390436
ABSTRACT:
A method for producing a substrate for forming a polysilicon thin film by forming an amorphous silicon film of a thickness not more than 200 .ANG., irradiating excimer laser light onto the amorphous silicon film to crystallize silicon particles contained in the amorphous silicon film; and irradiating the amorphous silicon film with hydrogen radicals to etch the amorphous silicon film.
REFERENCES:
patent: 4151058 (1979-04-01), Kaplan et al.
patent: 4719501 (1988-01-01), Nakagawa et al.
patent: 4789883 (1988-12-01), Cox et al.
patent: 4947219 (1990-08-01), Boehm
patent: 5006180 (1991-04-01), Kanai et al.
patent: 5164338 (1992-11-01), Graeger et al.
patent: 5200630 (1993-04-01), Nakamura et al.
patent: 5354698 (1994-10-01), Cathey
patent: 5424230 (1995-06-01), Wakai et al.
C. Jian et al., Chinese J. Semicond. 10(3)(1989)217 "Influence of annealing on Ar laser recrystallized poly-Si . . . " Mar. 1989.
Translation of JP 63-55929 Mar. 1988.
Translation of JP 56-23748 Mar. 1981.
Translation of JP 62-31111 Feb. 1987.
T. Noguchi et al., Jpn.J.Appl.Phys., 24(6)(1985)L434, ". . . Super Thin PolysilIcon Films . . . " Jun. 1985.
T. Takeshita et al., Jpn.J.Appl.Phys., 27(11)(1988)L2118, "ECR Hydrogen Plasma . . . TFTs" Nov. 1988.
M. Heintze et al., Appl.Phys.Lett., 64(23)(1994)3148, "Lateral Structuring of Si Thin Films . . . "Jun. 1994.
Bowers Jr. Charles L.
Kanegafuchi Chemical Industry Co. Ltd.
Radomsky Leon
LandOfFree
Method for producing a substrate having crystalline silicon nucl does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for producing a substrate having crystalline silicon nucl, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for producing a substrate having crystalline silicon nucl will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-634082