System for measuring carrier lifetime of semiconductor wafers

Electricity: measuring and testing – Measuring – testing – or sensing electricity – per se – With rotor

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324 65P, 324158F, G01R 104

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active

045786410

ABSTRACT:
A contactless rf technique for measurement of the carrier lifetime from the photoconductivity induced in silicon wafers by a flash of infrared light. The carrier lifetime is inferred from the photoconductivity decay.

REFERENCES:
patent: 2215213 (1940-09-01), Ellis
patent: 3206674 (1965-09-01), Thuy et al.
patent: 3437929 (1969-04-01), Glenn
patent: 4286215 (1981-08-01), Miller
Maguire, "New Technique for Producing Ultrapure Semiconductors", Electronics, vol. 34, No. 27, Jul. 7, 1961, pp. 41-45.
Weingorten, "Radio Frequency Carrier and Capacitive Coupling Procedures for Resistivity and Lifetime Measurements on Silicone" Journal of the Electrochemical Soc., vol. 108, No. 2, pp. 167-171.

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