Method of manufacturing semiconductor device having capacitor

Details Method of manufacturing semiconductor device having capacitor Method of manufacturing semiconductor device having capacitor

1996-01-31

1997-07-29

Tsai, Jey

Fishing, trapping, and vermin destroying

437919, 437 52, H01L 2170, H01L 2700

Patent

active

056521715

ABSTRACT:
A platinum bottom electrode film, a dielectric film composed of a high permittivity dielectric material or a ferroelectric material, and a platinum top electrode film are formed on a substrate on which circuit elements and wiring are formed, and the platinum top electrode film and the dielectric film are selectively dry-etched by using etching gas containing chlorine, then plasma generated by discharging gas containing fluorine is irradiated. By this method of manufacturing a semiconductor device including a capacitor, there is almost no residual chlorine, and hence erosion of the dielectric film by residual chlorine is prevented.

REFERENCES:
patent: 5216572 (1993-06-01), Larson et al.
patent: 5335138 (1994-08-01), Sandhu et al.
patent: 5527729 (1996-06-01), Matsumoto et al.

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