Method for fabricating a programmable semiconductor element havi

Fishing – trapping – and vermin destroying

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437922, 148DIG55, H01L 2170, H01L 2700

Patent

active

056521693

ABSTRACT:
A programmable semiconductor element having an antifuse structure and a method for fabricating the same is disclosed. The fabrication method for a programmable semiconductor element having an antifuse structure includes processes for forming a first insulation film on a silicon substrate, forming a conductive material having a fixed width on the first insulation film, forming a second insulation film on the conductive material, forming a recess by etching a part of the second insulation film, forming a conductive link at corners of the recess in the second insulation film, forming a contact hole by etching the second insulation film in the recess thereof having no conductive link formed thereon, exposing the conductive material at a lower part, forming two separated conductors by etching the exposed conductive material, and forming a capping insulation film on the overall surface of the substrate and covering the conductive link.

REFERENCES:
patent: 4751197 (1988-06-01), Wills
patent: 4853758 (1989-08-01), Fischer
patent: 5019878 (1991-05-01), Yang et al.
patent: 5365105 (1994-11-01), Liu et al.
patent: 5552627 (1996-09-01), McCollum et al.
patent: 5585662 (1996-12-01), Ogawa

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