Method of forming a semiconductor device having a capacitor with

Details Method of forming a semiconductor device having a capacitor with Method of forming a semiconductor device having a capacitor with

1995-02-08

1997-07-29

Tsai, Jey

Fishing, trapping, and vermin destroying

437 52, 437919, 437 47, H01L 2170, H01L 2700

Patent

active

056521685

ABSTRACT:
A lower electrode of a capacitor for use in a semiconductor device includes a first semiconductor layer having a predetermined impurity concentration and a second semiconductor layer having an impurity concentration higher than that of the first semiconductor layer. As a result, intensification of an electric field at an end portion of the capacitor can be reduced. In addition, a word line is formed of a buffer layer and a main conductor layer to reduce a parasitic capacitance between the lower electrode of the capacitor and the word line.

REFERENCES:
patent: 5006481 (1991-04-01), Chan et al.
patent: 5045494 (1991-09-01), Choi et al.
patent: 5071783 (1991-12-01), Taguchi et al.

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