Method of fabricating a buried contact structure with WSi.sub.x

Details Method of fabricating a buried contact structure with WSi.sub.x Method of fabricating a buried contact structure with WSi.sub.x

1996-03-08

1997-07-29

Quach, T. N.

Fishing, trapping, and vermin destroying

437 44, 437187, 437193, 437200, H01L 21335

Patent

active

056521600

ABSTRACT:
A method of forming WSi.sub.x sidewall spacers as an etching stop in the fabrication process of a buried contact. After a gate dielectric layer and a first conducting layer are formed over a substrate, an opening is formed by etching through the gate dielectric layer and first conducting layer. WSi.sub.x sidewall spacers are thereafter formed on the sidewalls of the opening. Then, a second conducting layer is deposited onto the overall surface as well as being connected to the substrate via the opening. When the second and first conducting layers are patterned and etched to form a gate electrode and an interconnect layer, the WSi.sub.x acts as the etching stop to prevent the formation of ditches in the substrate.

REFERENCES:
patent: 5326713 (1994-07-01), Lee
patent: 5543362 (1996-08-01), Wu

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