Process having high tolerance to buried contact mask misalignmen

Details Process having high tolerance to buried contact mask misalignmen Process having high tolerance to buried contact mask misalignmen

1996-04-22

1997-07-29

Chaudhari, Chandra

Fishing, trapping, and vermin destroying

437191, 437200, 437240, H01L 21441

Patent

active

056521529

ABSTRACT:
A new method of forming improved buried contact junctions is described. A layer of polysilicon overlying gate silicon oxide is provided over the surface of a semiconductor substrate and etched away to provide an opening to the substrate where a planned buried contact junction will be formed. A second doped polysilicon layer and a tungsten silicide layer are deposited and patterned to provide gate electrodes and a contact overlying the planned buried contact junction and providing an opening to the substrate where a planned source/drain region will be formed adjoining the planned buried contact junction and wherein a portion of the polysilicon layer not at the polysilicon contact remains as residue. The residue is etched away whereby a trench is etched into the substrate at the junction of the planned source/drain region and the planned buried contact junction. A doped glasseous layer is deposited overlying the patterned tungsten silicide/polysilicon layer and within the trench, then isotropically etched away until it remains only partially filling the trench. The substrate is oxidized to drive-in dopant from the doped glasseous layer within the trench into the surrounding substrate. Ions are implanted to form the planned source/drain region. Dopant is outdiffused from the second polysilicon layer to form the planned buried contact junction wherein the dopant surrounding the trench provides a conduction channel between the source/drain region and the adjoining buried contact junction.

REFERENCES:
patent: 5232874 (1993-08-01), Rhodes et al.
patent: 5315150 (1994-05-01), Furuhata
patent: 5350712 (1994-09-01), Shibata
patent: 5506172 (1996-04-01), Tang
patent: 5576242 (1996-11-01), Liu

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