Semiconductor laser with coupled loss modulator for optical tele

Details Semiconductor laser with coupled loss modulator for optical tele Semiconductor laser with coupled loss modulator for optical tele

1983-07-08

1985-12-10

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 26, 372 50, 372 92, H01S 319

Patent

active

045584494

ABSTRACT:
A semiconductor heterojunction optical loss modulator section (30), having an anti-reflection coating (52) on its optical output beam facet (32), is located with an opposite facet (31) optically coupled to, and closely spaced from, a semiconductor heterojunction laser section (20) having substantially the same cross-section structure as the loss modulator section (30). The laser section is operated CW in a single mode. In this way, the output beam (50) emanating from the laser section (20) and passing through the anti-reflection coating (52) can be coupled into an optical fiber (60) for transmission purposes. This output beam (50) is substantially single frequency and is intensity modulated, in a signal-pattern independent fashion, in accordance with an electrical signal applied to the loss modulator section (30).

REFERENCES:
patent: 3748597 (1973-07-01), Reinhart
patent: 3897135 (1975-07-01), Dyott
patent: 4284963 (1981-08-01), Allen et al.
Dyment et al., "Suppression of Semiconductor Laser Pulsations using Optical Feedback from a Fiber", J. Appl. Phys. 51(10), Oct. 1980, pp. 5252-5256.
Coldren et al., "Monolithic Two-Section GaInAsP/InP Active-Optical-Resonator Devices formed by Reactive Ion Etching", APL 38(5) Mar. 1, 1981, pp. 315-317.
R. A. Logan et al., "InGaAsP/InP (1.3 .mu.m) Buried-Crescent Lasers with Separate Optical Confinement," Electronics Letters, vol. 18, No. 20, Sep. 30, 1982, pp. 895-896.
W. T. Tsang et al., "High-Speed Direct Single-Frequency Modulation with Large Tuning Rate and Frequency Excursion in Cleaved-Coupled-Cavity Semiconductor Lasers", Applied Physics Letters, vol. 42, No. 8, Apr. 15, 1983, pp. 650-652.
D. Welford et al., "Output Power and Temperature Dependence of the Linewidth of Single Frequency CW (GaAl) as Diode Lasers", Applied Physics Letters, vol. 40, No. 10, May 15, 1982, pp. 865-867.

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