Plasma generating apparatus and plasma processing apparatus

Details Plasma generating apparatus and plasma processing apparatus Plasma generating apparatus and plasma processing apparatus

1995-03-01

1997-07-29

Niebling, John

Coating apparatus

Gas or vapor deposition

With treating means

118723MW, C23C 1600

Patent

active

056518250

ABSTRACT:
A plasma material gas is introduced into a plasma producing chamber, and, if necessary, a processing gas is introduced into a processing chamber communicated with the plasma producing chamber. In the plasma producing chamber, a microwave is radiated to a sintered body of metal oxide forming a plasma source, so that plasma is generated from the plasma material gas. Ions generated thereby are accelerated and introduced into the processing chamber. Predetermined processing is performed on a work directly by the ions, or is performed in a plasma generated by the ions from the processing gas.

REFERENCES:
patent: 4876983 (1989-10-01), Fukuda et al.
patent: 5021114 (1991-06-01), Saito et al.
patent: 5081398 (1992-01-01), Asmussen et al.
patent: 5162633 (1992-11-01), Sonobe et al.
patent: 5206471 (1993-04-01), Smith
patent: 5211825 (1993-05-01), Saito et al.
patent: 5284544 (1994-02-01), Mizutani et al.
patent: 5292370 (1994-03-01), Tsai et al.
patent: 5359177 (1994-10-01), Taki et al.
patent: 5368685 (1994-11-01), Kumihashi et al.
patent: 5462635 (1995-10-01), Ono et al.
"Special Series on Irradiation Enhanced Adhesion," Vacuum, vol. 38, No. 2, pp. 73-81, 1988, Rossnagel et al.
Sugiyama, Kazuo and Tsutsumi, Kazuyoshi and Matsuda, Tsuneo, "Nitrogen monoixade decomposition by microwave argon plasma at atomosheric pressure", Denki Kagaku oyobi Kogyo Butsuri Kagaku, abstract, 1992.

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