Method of forming conductive channel extensions to active device

Details Method of forming conductive channel extensions to active device Method of forming conductive channel extensions to active device

1983-09-20

1985-07-23

Roy, Upendra

Metal working

Method of mechanical manufacture

Assembling or joining

29571, 148 15, 148187, 357 42, 357 91, H01L 2902, H01L 21265

Patent

active

045301506

ABSTRACT:
A method for producing a semiconductor device which includes forming, in a well having the first conductivity type and selectively provided in a semiconductor substrate having a second conductivity type opposite the first conductivity type, two first impurity diffusion regions having the second conductivity type. In an exposed surface region of the substrate, the two second impurity diffusion regions, respectively, forming, in the well and the exposed surface region of the substrate, a third impurity diffusion region by implanting impurity ions having a P-type or N-type into the semiconductor substrate. The method also includes forming an electric current channel either between the two first impurity diffusion regions or between the two second impurity diffusion regions, thereby forming various integrated circuits by changing the wiring channel.

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patent: 4433468 (1984-02-01), Kawamata
patent: 4490736 (1984-12-01), McElroy
Bassous et al., IBM-TDB, 22 (1980) 5146.

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