Semiconductor device in particular a hot electron transistor

Details Semiconductor device in particular a hot electron transistor Semiconductor device in particular a hot electron transistor

1987-11-09

1989-10-31

Edlow, Martin H.

357 34, 357 22, H01L 2980

Patent

active

048780952

ABSTRACT:
In a semiconductor device having a plurality of semiconductor layers of different composition, such as a hot electron transistor, in which respective layers are contacted to form a majority carrier injection electrode, a control electrode and a majority carrier extraction electrode, the layers forming the electrodes are separated from one another by separating layers or layer systems of different composition. These separating layers form potential barriers for the majority carriers. A problem with such known devices is that the layer forming the control electrode has to have a low resistance which has previously required a high doping concentration in this layer. This doping concentration however increases losses due to plasmon/phonon coupling and scattering and reduces the switching speed of the device. This problem is now overcome by using an undoped layer for the control electrode and by asymmetrically doping an adjacent separating layer or layer system to form a two-dimensional electron or hole gas confined in a potential well at the interface between the control electrode and the doped separating layer or layer system. The control electrode contact is then made to the two-dimensional electron or hole gas which ensures adequately low resistance and high switching speeds.

REFERENCES:
patent: 4691215 (1987-09-01), Luryi
Solid State Electronics, vol. 24, 1981, pp. 343-366, "Tunneling Hot Electron Transfer Amplifiers (Theta): Amplifiers Operating Up to the Infrared"; M. Heiblum.
Japanese Journal of Applied Physics, vol. 24, No. 11, Nov. 1985, part 2, Letters, pp. L853-L854, Tokyo, JP; "A New Functional Resonant-Tunneling Hot Electron Transistor (RHET)"; N. Yokoyama .
Applied Physics Letters, vol. 48, No. 1, Jan. 1987; pp. 71-73, American Institute of Physics, New York, U.S., "A High-Frequency Amplification and Generation in Charge Injection Devices"; A. Kastalsky et al.
Electronics Letters, vol. 21, No. 17, Aug. 15, 1985, pp. 757-758, Stevenage, Herts, GB; "MOCVD-grown AlGaAs/GaAs Hot Electron Transistor with a Base Width of 30 nm".
Applied Physics Letter 51(15), Oct. 12, 1987, "Selectively 6-Doped Al.sub.x Ga.sub.1-x As/GaAs Heterostructure with High Two-Dimensional Electron--gas Concentrations . . ." E. F. Schubert.

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