Method of manufacturing amorphous silicon electrophotographic ph

Details Method of manufacturing amorphous silicon electrophotographic ph Method of manufacturing amorphous silicon electrophotographic ph

1994-03-23

1996-04-30

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

437 4, 118723E, 118723MW, H01L 2120

Patent

active

055125107

ABSTRACT:
A method for stably manufacturing, with improved reproducibility, a good amorphous silicon electrophotographic photosensitive member improved in potential characteristics such as chargeability and photoresponse as well as in the effect of reducing photo-memory and defects which cause spot image defects. A film is formed by plasma CVD on a base of the photosensitive member by using electromagnetic waves having a frequency of 13.56 MHz or higher as power for forming plasma under conditions that the spatial potential of plasma generated by the electromagnetic waves with respect to a base of the photosensitive member is not higher than 120 V and the current density of ions incident upon the base is not lower than 0.4 mA/cm.sup.2.

REFERENCES:
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patent: 4664937 (1987-05-01), Ovshinsky et al.
patent: 5187115 (1993-02-01), Colman
patent: 5223457 (1993-06-01), Mintz et al.
"Glow discharge process" by Brian Chapman, pp. 168-169, John Willy & sons.

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