Method for forming an isolation layer in a semiconductor device

Details Method for forming an isolation layer in a semiconductor device Method for forming an isolation layer in a semiconductor device

1994-11-23

1996-04-30

Fourson, George

Fishing, trapping, and vermin destroying

437 72, H01L 2176

Patent

active

055125093

ABSTRACT:
A present method for forming an isolation layer in a semiconductor can minimize the size of a "bird's beak" and reduce the stress on a silicon substrate by forming a trench in the filed region, a nitride spacer on the inner wall of the trench, and a polysilicon spacer on the nitride spacer that is formed on the inner wall of the trench.

REFERENCES:
patent: 5175122 (1992-12-01), Wang et al.

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