Method of producing semiconductor device

Details Method of producing semiconductor device Method of producing semiconductor device

1995-01-25

1996-04-30

Fourson, George

Fishing, trapping, and vermin destroying

437 27, 437 57, H01L 21265

Patent

active

055124984

ABSTRACT:
A method of producing a semiconductor device, comprising the following steps: (1) providing a patterned resist mask over a semiconductor substrate, the resist mask being formed with a first opening portion having a first aspect ratio, and a second opening portion having a second aspect ratio larger than the first aspect ratio; (2) forming an impurity diffusion layer by an oblique ion-implantation of impurity ion into a surface of the semiconductor substrate through the second opening portion at an implantation angle to prevent the impurity ion from reaching a bottom surface of the second opening portion; and (3) ion-implanting impurity ion from substantially vertical angle to the semiconductor substrate by using the resist mask.

REFERENCES:
patent: 4232439 (1980-11-01), Shibata
patent: 5183768 (1993-02-01), Kameyama et al.
patent: 5355006 (1994-10-01), Iguchi
patent: 5444007 (1995-08-01), Tsuchiaki

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