Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

1988-03-31

1989-10-31

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437192, 437193, 437 27, H01L 2100, H01L 2102, H01L 21283, H01L 2131

Patent

active

048777544

ABSTRACT:
A semiconductor device comprising a semiconductor body (1) having a surface (2) provided with a first insulating layer (3). On this layer is disposed a pattern of conductor strips (4) coated with insulation strips (5) with projecting edges (6). Under the edges (6), the conductor strips (4) are coated with insulating tracks (8) which fill the spaces under the edges (6) and which at least at the area where they adjoin the first insulating layer (3) can be etched selectively with respect to this layer (3). As a material for the conductor strips (4) use may be made of materials other than polycrystalline silicon, such as tungsten, molybdenum and silicides. The thickness of the first insulating layer (3) is affected to a very small extent during the manufacture of the device, while its depth remains unchanged.

REFERENCES:
patent: 4466172 (1984-08-01), Batra
patent: 4625391 (1986-12-01), Sasaki

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