Semiconductor nonvolatile memory device and computer system usin

Details Semiconductor nonvolatile memory device and computer system usin Semiconductor nonvolatile memory device and computer system usin

1996-07-10

1998-05-05

Popek, Joseph A.

Static information storage and retrieval

Floating gate

Particular biasing

36518522, 36518524, G11C 1134

Patent

active

057485321

ABSTRACT:
A semiconductor nonvolatile memory device including transistors whose threshold voltages can be electrically rewritten (erased, written). A read-selected word line voltage Vrw, lower than the supply voltage Vcc applied from the outside, is applied, and the threshold voltage difference between the higher threshold voltage VthH and the lower threshold voltage VthL in the two states of the nonvolatile memory cells is reduced to bring the higher threshold voltage VthH close to the lower threshold voltage VthL. Moreover, a threshold voltage Vthi in the thermally equilibrium state of the memory cell, corresponding to the two threshold voltages of the two states, is set between the higher threshold voltage VthH and the lower threshold voltage VthL.

REFERENCES:
patent: 5446690 (1995-08-01), Tanaka et al.
patent: 5592415 (1997-01-01), Kato et al.
T. Tanaka, et al., "High-Speed Programming and Program-Verify Methods Suitable for Low-Voltage Flash Memories", 1994 IEEE Symposium on VLSI Circuits Digest of Technical Papers, pp. 61-62, May 1994.
1995 IEEE Internal Solid-State Circuits Conference, "A 3.3V High-Density AND Flash Memory with 1ms/512B Erase & Program Time", pp. 124-125, Feb. 16, 1995.

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