1988-12-28
1990-05-15
Jackson, Jr., Jerome
357 4, 357 46, 357 49, H01L 4902, H01L 2714, H01L 3106
Patent
active
049262319
ABSTRACT:
An improved means and method for forming an optical sensor within an integrated circuit structure is described. An epi-coated semiconductor wafer is masked and a cavity etched through the epi-layer to the underlying substrate. A dielectric sidewall is formed on the cavity sidewall and a substantially intrinsic semiconductor region, preferably grown by selective epitaxy, to refill the cavity. The upper surface of the intrinsic region is then heavily doped and contacted by a low resistance polysilicon layer which is substantially transparent to incoming light. The method forms a high sensitivity PIN photo-sensor having a thick space-charge region for efficient capture of the hole-electron pairs produced by the incoming light. The fabrication techniques are compatible with the processing requirements for other integrated circuit devices formed on the same chip and to which the PIN device is coupled without wire bonds, tabs, bumps or the like.
REFERENCES:
patent: T892019 (1971-11-01), Sack
patent: 3378414 (1968-04-01), Freck
patent: 3946423 (1976-03-01), Augustine
patent: 4462847 (1984-07-01), Thompson
patent: 4514748 (1985-04-01), Beam et al.
patent: 4524375 (1985-06-01), Baumgartner et al.
Casteel Carroll M.
Hwang Bor-Yuan
Mastroianni Sal T.
Barbee Joe E.
Jackson, Jr. Jerome
Langley Stuart T.
Motorola Inc.
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