Process for plasma depositing silicon nitride and silicon dioxid

Details Process for plasma depositing silicon nitride and silicon dioxid Process for plasma depositing silicon nitride and silicon dioxid

1988-05-31

1989-10-31

Childs, Sadie

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

427 451, 427255, 4272552, 4272553, 437238, 437241, 437243, B05D 302, B05D 306, C23C 1630

Patent

active

048776416

ABSTRACT:
A plasma CVD process for forming silicon nitride-type or silicon dioxide-type films onto a substrate comprising the steps of:

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patent: 4699825 (1987-10-01), Sakai et al.
patent: 4720395 (1988-01-01), Foster
Chemical Abstracts, vol. 98, 126375t.
Chemical Abstracts, vol. 101, 91218.
Watanabe et al., "Properties of Silicon Nitride Films Prepared by Plasma-Enhanced Chemical Vapor Deposition of SiH.sub.4 -N.sub.2 Mixtures" Thin Solid Films, 136, pp. 77-83 (1986).
Watanabe et al., "A Simple and Convenient Method for Preparing Di-t-Butylsilanes", Chemistry Letters, pp. 1321-1322 (1981).
K. Triplett et al., "Synthesis and Reactivity of Some t-butyl-disilanes and digermanes".
Doyle et al., "Hindered Organosilicon Compounds Synthesis and Properties of Di-tert-butyl, Di-tert-butylmethyl- and Tri-tert-butylsilanes" J. American Chemical Society, 97, pp. 3777-3782 (1975).

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