Metal working – Method of mechanical manufacture – Assembling or joining
Patent
1977-05-18
1979-05-01
Tupman, W.
Metal working
Method of mechanical manufacture
Assembling or joining
29578, 148188, 357 59, B01J 1700
Patent
active
041516311
ABSTRACT:
An IC manufacturing method that eliminates the need for separate pad area and allows polysilicon MOS transistor gates to be contacted directly. Present silicon gate process techniques are utilized up to and including the formation of the gate oxide layer, with areas etched through to the substrate. Then polysilicon and silicon nitride are deposited preferably in the same deposition equipment. The polysilicon interconnect and gate pattern is selectively etched for both silicon nitride and polysilicon. Next, the gate oxide exposed by the previous step is removed and phosphorous is diffused into the exposed silicon substrate surfaces. The initial nitride thickness is chosen such that after phosphorous predeposition and subsequent removal of phosphorous glass, a thin layer of silicon nitride is left. A silicon oxide protective layer is then grown over the exposed silicon substrate surfaces. The remaining silicon nitride is removed and a phosphosilicate glass is deposited over the entire surface. Contact cuts are made through the phosphosilicate glass through which metal contacts are established.
REFERENCES:
patent: 3958323 (1976-05-01), De La Moneda
patent: 4035829 (1977-07-01), Ipri
National Semiconductor Corporation
Tupman W.
Woodward Gail W.
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