Semiconductor laser

Details Semiconductor laser Semiconductor laser

1989-07-12

1991-03-26

Epps, Georgia

Coherent light generators

Particular active media

Semiconductor

372 45, 357 17, H01S 319

Patent

active

050035495

ABSTRACT:
A semiconductor laser particularly adapted for operation in the self-pulsation mode and method for production thereof. A central mesa is formed in the upper cladding layer and normally requires relatively thick sections at either side of the mesa in order to form a waveguide of sufficient thickness to cause self-pulsation operation. In order to control the thickness of the upper cladding layer bounding the mesa, the mesa is first formed by etching the regions bounding the mesa to relatively thin sections capable of ready gauging by optical interferometry. A composite upper cladding layer is then formed by utilizing MOCVD crystal growth techniques to form a buffer layer on the upper cladding layer bounding the mesa, the buffer layer having an aluminum content about the same as the aluminum content of the AlGaAs upper cladding layer. The composite layer functions as a comparatively thick waveguide which can be formed to the necessary thickness with adequate accuracy to provide a high yield when producing self-pulsation lasers according to the present invention.

REFERENCES:
"A New Self-Aligned Structure of (GaAl)Aas High Power Lasers with Selectively Grown Light Absorbing AaAs Layers Fabricated by MOCVD", by Nakatsuka et al., Japanese Journal of Applied Physics, vol. 25, No. 6, Jun. 1986, pp. L498-L500.
"High-Power Operation of Index-Guided Inverted Channel Substrate Planar (ICSP) Lasers", Electronics Letters, 15th Aug. 1985, vol. 21, No. 17, pp. 751-752.
"Complementary Self-Aligned Laser by Metalorganic Chemical Vapour Deposition", Electronics Letters, 26th Sep. 1985, vol. 21, No. 20, pp. 903-905.
"A New High-Power Output Semiconductor Laser Used For Optical Disk Drive", Semicon News, 6/1988, p. 98.

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