Semiconductor switch with parallel lateral double diffused MOS t

Details Semiconductor switch with parallel lateral double diffused MOS t Semiconductor switch with parallel lateral double diffused MOS t

1988-10-24

1990-05-15

Miller, Stanley D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

3073032, 307570, 307246, 357 234, 357 236, 357 38, H03K 1704, H03K 1714, H03K 17284, H03K 17687

Patent

active

049260740

ABSTRACT:
A semiconductor switch comprising a lateral DMOS and a lateral IGT both of which can be fabricated in a monolithic integrated circuit. In operation the lateral DMOS stays on while the lateral IGT is switched off in order to reduce turn off power dissipation.

REFERENCES:
patent: 4199774 (1980-04-01), Plummer
patent: 4300150 (1981-11-01), Colak
patent: 4618872 (1986-10-01), Baliga
patent: 4694313 (1987-09-01), Beasom
patent: 4712124 (1987-12-01), Stupp
patent: 4779123 (1988-10-01), Bencuya et al.
patent: 4812688 (1989-03-01), Chu et al.
IEEE Transaction vol. ED 33, vol. 12, Dec., 1986, pp. 1956-1963, Pahanayak et al.

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