Metal-insulator-semiconductor control of guided optical waves in

Details Metal-insulator-semiconductor control of guided optical waves in Metal-insulator-semiconductor control of guided optical waves in

1989-03-15

1989-10-31

Sikes, William L.

350 9612, 357 17, G02B 610

Patent

active

048772992

ABSTRACT:
This invention describes an infrared lightwave modulation and switching aratus for very rapidly changing the refractive index of a light-transmitting, doped, semiconductor waveguide. Electrical control is exerted by a MIS diode or MISFET. The apparatus includes a transparent crystalline silicon waveguide, an electrically insulating dielectric layer overlaying a portion of that waveguide, and an elongated, conductive gate electrode in contact with the insulator. A gate voltage applied between the semiconductor and gate serves to deplete free charge carriers from the region of the waveguide under the gate. Elongated source and drain electrodes may be added to enhance electro-optic control.

REFERENCES:
patent: 3713912 (1973-01-01), Schwartz
patent: 4693546 (1987-09-01), Lorenzo et al.
patent: 4693547 (1987-09-01), Soref et al.
patent: 4728167 (1988-03-01), Soref et al.
patent: 4746183 (1988-05-01), Soref et al.
patent: 4787691 (1988-11-01), Lorenzo et al.
patent: 4799095 (1989-01-01), Baliga

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