Semiconductor device

Details Semiconductor device Semiconductor device

1987-10-21

1991-07-09

Larkins, William D.

357 12, 357 16, 357 17, 357 34, H01L 2972, H01L 29205, H01L 3300, H01L 2908

Patent

active

050310054

ABSTRACT:
A semiconductor device comprises stacked first through fifth semiconductor layers. The semiconductor device has an energy level condition of .vertline.Ec.sub.3 -Ec.sub.1 .vertline..apprxeq..vertline.Ev.sub.3 -Ev.sub.5 .vertline., where Ec.sub.3 is a resonant energy level of electrons in a conduction band of the third layer and Ev.sub.3 is a resonant energy level of holes in a valence band thereof, and Ec.sub.1 is an energy level of a conduction band of the first layer and Ev.sub.5 is an energy level of a valence band of the fifth layer.

REFERENCES:
patent: 4712121 (1987-12-01), Yokoyama
patent: 4780749 (1988-10-01), Schulman
IBM Technical Disclosure Bulletin, vol. 27, No. 5, Oct. 1984, pp. 3053-3056, New York, U.S.A.; B. Ricco et al.: "Tunable Resonant Tunnelling Semiconductor Emitter Structure", whole document.

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