Method of manufacturing a semiconductor device

Details Method of manufacturing a semiconductor device Method of manufacturing a semiconductor device

1989-06-27

1990-05-15

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 41, 437192, 437200, 357 233, H01L 21265

Patent

active

049258079

ABSTRACT:
A method of manufacturing a semiconductor device comprises the steps of forming a first insulation and a first conductive films on a surface of a semiconductor region of a first conductivity type subsequently, forming a second insulation film over the surface of the patterned first conductive film, forming a first and a second impurity-diffused layer of a second conductivity type, forming a second conductive and a third insulation films over the first and second insulation films subsequently, performing an anisotropic etching to cause a lamination film of the second and third insulation films to remain in a region of a side wall of the patterned first conductive layer, forming a third and a fourth impurity-diffused layer of the second conductivity type, the concentration of impurities in which layers being higher than that of impurities in the first and second impurity-diffused layers, selectively forming a third conductive film over the first and second conductive films which have been exposed, and connecting the first and second conductive films with each other by the third conductive film, whereby the second conductive film serving as a gate electrode is formed on the first and second inpurity-diffused layers for relaxing an electric field.

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