Metallization contact system for large scale integrated circuits

Details Metallization contact system for large scale integrated circuits Metallization contact system for large scale integrated circuits

1988-02-01

1990-06-12

James, Andrew J.

357 68, 357 65, H01L 2348

Patent

active

049337424

ABSTRACT:
A contact metal such as tungsten, platinum silicide or palladium silicide is selectively deposited or formed on the semiconductor substrate portion of an integrated circuit chip. The metallization pattern for the circuit makes contact with the contact metal at the bottom of a contact opening or via, rather than contacting the substrate directly. Thus, the interconnection metal makes contact to the semiconductor surface through an intermediate contact metal so as to provide decreased contact resistance. This permits narrower interconnect metallization patterns so as to facilitate the construction of denser integrated circuits. In the present invention, therefore, metal framing of the contact hole is not employed.

REFERENCES:
patent: 4242698 (1980-12-01), Ghate
patent: 4582563 (1986-04-01), Hazuki et al.
patent: 4622735 (1986-11-01), Shibata
patent: 4656732 (1987-04-01), Teng et al.
patent: 4672419 (1987-06-01), McDavid
Hewlett Packard Journal, Aug., 1983, pp. 27-30, by Mikkelson et al.

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