Semiconductor light emitting device disposed in an insulating su

Details Semiconductor light emitting device disposed in an insulating su Semiconductor light emitting device disposed in an insulating su

1988-08-02

1991-03-26

James, Andrew J.

357 30, 357 16, 357 55, H01L 2715, H01S 318

Patent

active

050033581

ABSTRACT:
A semiconductor light emitting device includes a vertical aperture produced at a main surface of a semi-insulating or insulating substrate, a transverse aperture provided in the substrate communicating with the vertical aperture, a conducting semiconductor layer buried in the vertical aperture and the transverse aperture, a groove produced by etching the substrate from the surface thereof until reaching the conducting semiconductor layer at a portion of the transverse aperture, and a light emitting element produced in the groove, and the light emitting region of the element being buried in the groove and connected with the buried conducting semiconductor layer. Accordingly, no pn junction exists at the periphery of the light emitting region, and a semiconductor light emitting element of quite low parasitic capacitance is obtained at high yield. A planar structure in which two electrodes are produced at the same plane is obtained, resulting in ease of integration and enhancement of the integration density.

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