Slot collector transistor

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357 55, 357 59, H01L 2972

Patent

active

049337335

ABSTRACT:
An improved semiconductor device is presented, the improvement comprising a slot collector contact region (38). The slot collector contact region (38) is formed in a semiconductor substrate (39) adjacent to base and emitter regions (40,44) of the bipolar semiconductor device. The slot collector contact region (38) is comprised of a slot filled with a filler material. In a preferred embodiment of the invention, the slot collector contact region (38) is separated from the base and emitter regions (40,44) by an insulating layer (52).

REFERENCES:
patent: 3913124 (1975-10-01), Roberson
patent: 4089021 (1978-05-01), Sato et al.
patent: 4269636 (1981-05-01), Rivoli
IBM Technical Disclosure Bulletin vol. 23 #9 Feb. 1981 by Horng, p. 4137.

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